| PART |
Description |
Maker |
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| AGB3310 AGB3310S24Q1 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
Gain Block Amplifiers
50з High Linearity Low Noise Internally Biased Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
| EL5234 EL5234IY-T13 EL5235IS-T7 EL5134 EL5134IS-T7 |
Replaced by PCM1794A : 132dB SNR Highest Performance Stereo DAC (H/W Control) 28-SSOP -25 to 85
630MHz, Gain of 5, Low Noise Amplifiers 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
630MHz, Gain of 5, Low Noise Amplifiers 1 CHANNEL, VIDEO AMPLIFIER, PDSO10
630MHz, Gain of 5, Low Noise Amplifiers 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
|
http://
INTERSIL[Intersil Corporation]
音频／视频放
Intersil, Corp.
|
| BFS481 Q62702-F1572 |
From old datasheet system
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SMA428ATR |
HIGH GAIN, LOW NOISE AMPLIFIER
|
ST Microelectronics
|
| EPB025A |
Low Noise High Gain Heterojunction FET
|
Electronic Theatre Controls, Inc.
|
| EPB025A |
Low Noise High Gain Heterojunction FET
|
Excelics Semiconductor, Inc.
ETC[ETC]
|
